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Electronic Transport and Device Applications of 2D Materials
2017-01-06     作者:      来源:       浏览次数:1821

学术报告通知

报告题目:Electronic Transport and Device Applications of 2D Materials

缪峰 教授 (南京大学物理学院,微结构国家实验室)

报告时间:2017年1月6日(星期五)下午2:30~4:00

报告地点:南校区超微超快所211会议室

:何军(junhe@csu.edu.cn

报告摘要:

During the last decade, tremendous research efforts have been focused on two-dimensional (2D) materials due to their rich physics and great potentials for many applications. Our group at Nanjing University is now focusing on electronic transport, electro-mechanical properties, optoelectronic properties, and related device applications of various 2D materials. The first part of my talk will focus on the electro-mechanical properties of suspended graphene, which is the thinnest flexible conductive material. I will present the positive piezoconductive effect we observed in suspended bi- and multi-layer graphene. The effect is highly layer-dependent, with the most pronounced response for tri-layer graphene. The effect, and its dependence on the layer number, can be understood as resulting from the strain-induced competition between interlayer coupling and intralayer hopping, as confirmed by the numerical calculation based on the non-equilibrium Green’s function method. [1]

The second part of the talk will cover our recent studies on transition-metal dichalcogenides (TMD) with low lattice symmetry. In a predicted type-II Weyl semimetal (WSM) material, tungsten ditelluride (WTe2), we observed notable angle-sensitive negative longitudinal magnetoresistance (MR) and the strong planar orientation dependence which reveal important transport signatures of chiral anomaly. By applying a gate voltage, we further demonstrated that the Fermi energy can be tuned through the Weyl points via the electric field effect; this is the first report of controlling the unique transport properties in situ in a WSM system. [2] We also studied atomically thin rhenium disulfide (ReS2) flakes exhibiting interesting in-plane anisotropic transport and mechanical properties, as well as excellent optoelectronic properties. We fabricated mono- and few-layer ReS2 field effect transistors, which exhibit competitive performances and record-high anisotropic ratio. We further successfully demonstrated an integrated digital inverter with good performances by utilizing two ReS2 anisotropic field effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. [3] Our latest results on the ultra-high responsivity phototransistors based on few-layer ReS2 and broadband photovoltaic detectors based on an atomically thin heterostructure will also be presented. [4,5]

 

References

[1] Xu, et al. “The positive piezoconductive effect in graphene”, Nat. Comm. 6, 8119 (2015).

[2] Wang, et al. “Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2”, Nat. Comm. 7, 13142 (2016).

[3] Liu, et al. “Integrated Digital Inverters Based on Two-dimensional Anisotropic ReS2 Field-effect Transistors”, Nat. Comm. 6, 6991 (2015).

[4] Liu, et al. “Ultra-high responsivity phototransistors based on few-layer ReS2 for weak signal detection”, Adv. Func. Mater. 26, 1938 (2016).

[5] Long, et al. “Broadband photovoltaic detectors based on an atomically thin heterostructure”, Nano Lett. 16, 2254 (2016).

 

报告人简介:

缪峰, 南京大学物理学院和南京微结构国家实验室教授、博士生导师,国家杰出青年科学基金获得者,科技部国家重大科学研究计划青年项目首席科学家,国家青年千人计划入选者。2004年本科毕业于南京大学物理系,2009年获美国加州大学河滨分校物理学博士学位,同年获得最佳博士毕业生奖和国家优秀自费留学生奖,2009-2012年在美国惠普实验室(硅谷总部)任助理研究员,2012年入选国家青年千人计划后全职回南京大学工作。主要从事二维材料的电子输运研究,以及它们在信息器件领域的应用研究。在石墨烯电子弹道输运、过渡金属硫族化合物电子输运、二维材料场效应晶体管及逻辑器件、忆阻器(memristor)器件物理等研究上取得了一系列创新成果。作为第一作者或通讯作者在Science、Nature子刊、Phys. Rev. Lett.等国际权威学术期刊上发表论文,共发表SCI论文50余篇,总引用8800余次;已获授权美国专利8项,申请中国专利5项。目前担任Scientific Reports和npj 2D Materials and Applications的编委和Nature Nano.、Nature Comm.、Adv. Mater.、Nano Lett.等学术期刊的特约审稿人。

 

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